emc643sp16ak Emlsi Inc., emc643sp16ak Datasheet - Page 16

• Manufacturer Part Number: emc643sp16ak
• Description: 4mx16 Bit Cellularram Ad-mux
• Manufacturer: Emlsi Inc.

EMC643SP16AK
4Mx16 CellularRAM AD-MUX
LOW-POWER OPERATION
Standby Mode Operation
During standby, the device current consumption is reduced to the level necessary to perform the DRAM refresh operation. Standby
operation occurs when CE# is HIGH. The device will enter a reduced power state upon completion of a READ or WRITE operation, or
when the address and control inputs remain static for an extended period of time. This mode will continue until a change occurs to the
address or control inputs.
Temperature Compensated Refresh
Temperature compensated self refresh (TCSR) allows for adequate refresh at different temperatures. This CellularRAM device includes
an on-chip temperature sensor that automatically adjusts the refresh rate according to the operating temperature. The device continually
monitors the temperature to select an appropriate self-refresh rate.
Partial Array Refresh
Partial array refresh (PAR) restricts refresh operation to a portion of the total memory array. This feature enables the device to reduce
standby current by refreshing only that part of the memory array required by the host system. The refresh options are full array, one-half
array, one-quarter array, one-eighth array, or none of the array. The mapping of these partitions can start at either the beginning or the
end of the address map(See Table 7 on page 29). READ and WRITE operations to address ranges receiving refresh will not be affected.
Data stored in addresses not receiving refresh will become corrupted. When re-enabling additional portions of the array, the new
portions are available immediately upon writing to the RCR.
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