hsd2m64b2 ETC-unknow, hsd2m64b2 Datasheet - Page 5

• Manufacturer Part Number: hsd2m64b2
• Description: Synchronous Dram Module 16mbyte 2mx64-bit , So-dimm, 4banks, Ref., 3.3v
• Manufacturer: ETC-unknow

HANBit
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) )
Notes:
1. V
2. V
3. Any input 0V
CAPACITANCE
(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
URL:www.hbe.co.kr
REV.1.0 (August.2002)
Clock
/RAS, /CAS,/WE,/CS, CKE, DQM
Address
DQ (DQ0 ~ DQ31)
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input leakage current
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
PARAMETER
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
PARAMETER
V
DESCRIPTION
IN
V
DDQ
.
SYMBOL
SYMBOL
V
Vcc
V
V
V
I
I
IH
CC2
I
I
OH
OL
LI
CC2
CC2
IL
I
CC1
PS
P
N
Burst length = 1
t
I
CKE
t
CKE & CLK
t
CKE
CS*
Input signals are changed
one time during 20ns
RC
O
CC
CC
= 0mA
=10ns
=
t
MIN
-0.3
RC
3.0
2.0
2.4
-10
V
V
V
-
(min)
IH
CONDITION
IL
IH
(min), t
(max)
SYMBOL
(min)
TEST
C
C
C
C
ADD
OUT
V
CLK
3ns.
IN
5
IL
3ns.
(max)
CC
=10ns
TYP.
3.3
3.0
0
-
-
-
MIN
2.5
2.5
2.5
4.0
Vcc+0.3
MAX
3.6
0.8
0.4
10
-
130
-8
VERSION
MAX
4.0
4.5
4.5
6.5
20
2
2
115
-10
HANBit Electronics Co.,Ltd.
UNIT
HSD2M64B2
uA
V
V
V
V
V
UNITS
UNIT
mA
mA
mA
mA
pF
pF
pF
pF
I
I
OH
OL
NOTE
= -2mA
= 2mA
1
2
3
NOTE
2