ST3400S23RG STANSON [Stanson Technology], ST3400S23RG Datasheet

no-image

ST3400S23RG

Manufacturer Part Number
ST3400S23RG
Description
N Channel Enhancement Mode MOSFET
Manufacturer
STANSON [Stanson Technology]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ST3400S23RG
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
The ST3400 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching
PIN CONFIGURATION
SOT-23-3L
PART MARKING
SOT-23-3L
ORDERING INFORMATION
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
Y: Year Code
※ ST3400S23RG
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
1.Gate
ST3400S23RG
Part Number
G
1
1
.
A0YA
2.Source
D
3
3
A: Week Code
S
S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
2
2
3.Drain
SOT-23-3L
Package
1
N Channel Enhancement Mode MOSFET
30V/5.8A, R
30V/4.8A, R
30V/4.0A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
FEATURE
@V
@V
@V
Part Marking
DS(ON)
DS(ON)
DS(ON)
ST3400
GS
GS
GS
A0YA
DS(ON)
= 10V
= 4.5V
= 2.5V
= 28mΩ (Typ.)
= 40mΩ
STN3400 2006. V1
= 33mΩ
5.8A

Related parts for ST3400S23RG

Related keywords