STN8205AAST8RG STANSON [Stanson Technology], STN8205AAST8RG Datasheet

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STN8205AAST8RG

Manufacturer Part Number
STN8205AAST8RG
Description
Dual N Channel Enhancement Mode MOSFET
Manufacturer
STANSON [Stanson Technology]
Datasheet
1.STN8205AAST8RG.pdf (7 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
STN8205AAST8RG
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
STN8205AA is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSSOP-8
ORDERING INFORMATION
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
※ ST8205AAST8RG
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
STN8205AAST8RG
Part Number
S：Subcontractor
Y: Year
A: Week Code
D1
D2
1
8
S2
7
S1
STN8205AA
2
SYA
S2
6
S1
3
G2
5
G1
4
ST8 : TSSOP-8; R: Tape Reel ; G: Pb – Free
Package
TSSOP-8
FEATURE
20V/6.0A, R
20V/5.0A, R
Super high density cell design for extremely
low R
Exceptional low on-resistance and maximum
DC current capability
TSSOP-8 package design
Dual N Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
DS(ON)
= 30m-ohm@V
=42m-ohm@V
STN8205AA
Part Marking
STN8205AA 2007. V1
SYA
GS
GS
=4.5V
=2.5V
6.0A

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STN8205AAST8RG Summary of contents

Page 1

... S：Subcontractor Y: Year A: Week Code ORDERING INFORMATION Part Number STN8205AAST8RG ※ Week Code Code : A ~ Z(1~26 z(27~52) ※ ST8205AAST8RG STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com Dual N Channel Enhancement Mode MOSFET FEATURE 20V/6.0A, R DS(ON) 20V/5.0A, R DS(ON) Super high density cell design for extremely ...

Page 2

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T =150 ) ℃ J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal ...

Page 3

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge ...

Page 4

TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205AA Dual N Channel Enhancement Mode MOSFET STN8205AA 2007. V1 6.0A ...

Page 5

TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205AA Dual N Channel Enhancement Mode MOSFET STN8205AA 2007. V1 6.0A ...

Page 6

TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205AA Dual N Channel Enhancement Mode MOSFET STN8205AA 2007. V1 6.0A ...

Page 7

TSSOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205AA Dual N Channel Enhancement Mode MOSFET STN8205AA 2007. V1 6.0A ...

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