STN4412S8RG STANSON [Stanson Technology], STN4412S8RG Datasheet

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STN4412S8RG

Manufacturer Part Number
STN4412S8RG
Description
N Channel Enhancement Mode MOSFET
Manufacturer
STANSON [Stanson Technology]
Datasheet
1.STN4412S8RG.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
STN4412S8RG
Manufacturer:
ST
0
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
STN4412S8RG
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
STN4412 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
ORDERING INFORMATION
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
※ STN4412S8RG
※ Process Code : A ~ Z ; a ~ z
STN4412S8RG
STN4412S8TG
Part Number
STN4412
S Y A
S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
Package
SOP-8P
SOP-8P
N Channel Enhancement Mode MOSFET
FEATURE
extremely low R
30V/6.8A, R
30V/5.6A, R
Super high density cell design for
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
STN4412
Copyright © 2007, Stanson Corp.
Part Marking
DS(ON)
DS(ON)
@V
@V
STN4412
STN4412
DS(ON)
STN4412 2007. V1
GS
GS
= 28mΩ
= 36mΩ
= 10V
= 4.5V
6.8A

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STN4412S8RG Summary of contents

Page 1

... PART MARKING SOP-8 STN4412 ORDERING INFORMATION Part Number STN4412S8RG STN4412S8TG ※ Process Code : ※ STN4412S8RG S8 : SOP Tape Reel ; – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4412 N Channel Enhancement Mode MOSFET FEATURE 30V/6.8A, R ...

Page 2

STN4412S8TG S8 : SOP Tube ; – Free ABSOULTE MAXIMUM RATINGS ( ℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ℃ ) Pulsed Drain Current ...

Page 3

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Static Drain-Source V (BR)DSS Breakdown Voltage Gate Threshold V GS(th) Voltage Gate Leakage Current I Zero Gate Voltage I Drain Current On-State Drain I Current Drain-source On- R ...

Page 4

TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4412 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4412 2007. V1 6.8A ...

Page 5

TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4412 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4412 2007. V1 6.8A ...

Page 6

PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4412 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4412 2007. V1 6.8A ...

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