STN4920S8RG STANSON [Stanson Technology], STN4920S8RG Datasheet

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STN4920S8RG

Manufacturer Part Number
STN4920S8RG
Description
Dual N Channel Enhancement Mode MOSFET
Manufacturer
STANSON [Stanson Technology]
Datasheet
DESCRIPTION
STN4920 is the Dual N-Channel logic enhancement mode power field effect
transistors which are produced using high cell density DMOS trench technology. It is
suitable for the power management applications in the portable or battery powered
system.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
ORDERING INFORMATION
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
※ STN4920S8RG
※ STN4920S8TG
※ Process Code : A ~ Z ; a ~ z
STN4920S8RG
STN4920S8TG
Part Number
S8 : SOP-8 ; T : Tube ; G : Pb – Free
S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
Package
SOP-8
SOP-8
Dual N Channel Enhancement Mode MOSFET
FEATURE
30V/7.2A, R
30V/6.0A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
STN4920
DS(ON)
DS(ON)
Copyright © 2007, Stanson Corp.
Part Marking
DS(ON)
= 28mΩ@VGS = 10V
STN4920
STN4920
= 36mΩ@VGS = 4.5V
STN4920 2007. V1
7.2A

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STN4920S8RG Summary of contents

Page 1

... SOP-8 PART MARKING SOP-8 ORDERING INFORMATION Part Number STN4920S8RG STN4920S8TG ※ Process Code : ※ STN4920S8RG S8 : SOP Tape Reel ; – Free ※ STN4920S8TG S8 : SOP Tube ; – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4920 ...

Page 2

ABSOULTE MAXIMUM RATINGS ( ℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ℃ ) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction ...

Page 3

ELECTRICAL CHARACTERISTICS ( ℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Tran Conductance Diode Forward Voltage Dynamic Total ...

Page 4

TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4920 Dual N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 7.2A STN4920 2007. V1 ...

Page 5

TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4920 Dual N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 7.2A STN4920 2007. V1 ...

Page 6

TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4920 Dual N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 7.2A STN4920 2007. V1 ...

Page 7

SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4920 Dual N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. 7.2A STN4920 2007. V1 ...

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