IRF4N60 SUNTAC [Suntac Electronic Corp.], IRF4N60 Datasheet

IRF4N60

Manufacturer Part Number

IRF4N60

Description

POWER MOSFET

Manufacturer

SUNTAC [Suntac Electronic Corp.]

Datasheet

1.IRF4N60.pdf (4 pages)

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GENERAL DESCRIPTION

This advanced high voltage MOSFET is designed to

withstand high energy in the avalanche mode and switch

efficiently. This new high energy device also offers a

drain-to-source diode with fast recovery time. Designed for

high voltage, high speed switching applications such as

power supplies, converters, power motor controls and

bridge circuits.

PIN CONFIGURATION

ABSOLUTE MAXIMUM RATINGS

Drain to Current

Gate-to-Source Voltage

Total Power Dissipation

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy

Thermal Resistance

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

TO-220

TO-220FP

= 100V, V

= 10V, I

Pulsed

TO-220/TO-220FP

Continuous

Top View

Junction to Case

Junction to Ambient

= 4A, L = 10mH, R

Continue

Non-repetitive

Rating

= 25 )

= 25

FEATURES

‹

SYMBOL

Higher Current Rating

Lower Rds(on)

Lower Capacitances

Lower Total Gate Charge

Tighter VSD Specifications

Avalanche Energy Specified

N-Channel MOSFET

Symbol

, T

GSM

STG

POWER MOSFET

-55 to 150

Value

1.70

±20

±40

300

4.0

IRF4N60

Page 1

Unit

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