IRF820-220 SUNTAC [Suntac Electronic Corp.], IRF820-220 Datasheet
IRF820-220
Related parts for IRF820-220
IRF820-220 Summary of contents
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... Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ‹ Diode is Characterized for Use in Bridge Circuits ‹ I and V DSS TO-252 TO-251 Front View Front View Rating IRF820 P MOSFET OWER (on) Specified at Elevated Temperature DS SYMBOL N-Channel MOSFET Symbol Value ± ...
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... ORDERING INFORMATION Part Number IRF820-251............................................TO-251 ..................IRF820-252............................................TO-252 ..................IRF820-220............................................TO-220 ..................IRF820-220FP ELECTRICAL CHARACTERISTICS Unless otherwise specified Characteristic Drain-Source Breakdown Voltage ( 250 Drain-Source Leakage Current (V = 600 480 125 ) Gate-Source Leakage Current-Forward ( ...
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... TYPICAL ELECTRICAL CHARACTERISTICS IRF820 P MOSFET OWER Page 3 ...
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... Front View Front View TO-220 A c1 φ Side View TO-220FP Side View Back View IRF820 P MOSFET OWER PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE φ ...
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... PACKAGE DIMENSION TO-252 C PIN 1: GATE E PIN 2: DRAIN PIN 3: SOURCE J H TO-251 C PIN 1: GATE E PIN 2: DRAIN PIN 3: SOURCE J H IRF820 P MOSFET OWER Page 5 ...