hm5216805 Renesas Electronics Corporation., hm5216805 Datasheet - Page 30

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hm5216805

Manufacturer Part Number
hm5216805
Description
16 M Lvttl Interface Sdram 100 Mhz/83 Mhz 1-mword 8-bit 2-bank/2-mword 4-bit 2-bank - Hitachi Semiconductor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
hm5216805TT10M
Manufacturer:
HITACHI/日立
Quantity:
20 000
HM5216805 Series, HM5216405 Series
Write command to Write command interval
Same bank, same ROW address: When another write command is executed at the same ROW address of
the same bank as the preceding write command, the second write can be performed after an interval of no
less than 1 cycle. In the case of burst writes, the second write command has priority.
WRITE to WRITE Command Interval (same ROW address in same bank)
Same bank, different ROW address: When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two write commands with a precharge command and a
bank-active command.
Different bank: When the bank changes, the second write can be performed after an interval of no less
than 1 cycle, provided that the other bank is in the bank-active state. In the case of burst write, the second
write command has priority.
WRITE to WRITE Command Interval (different bank)
30
Command
Command
Address
(A0-A10)
Address
(A0-A10)
BS (A11)
BS (A11)
Din
Din
CLK
CLK
Bank0
ACTV
Active
ACTV
Bank0
Active
Row 0
Row
Column =A
Write
Column A
ACTV WRIT
Bank1
WRIT
Active
in A0
Row 1
Column =B
Column B
Column A
WRIT
in B0
Bank0
in A0
Write
Write
Column B
in B1
WRIT
in B0
Bank1
Write
in B2
in B1
in B3
in B2
in B3
Burst Write Mode
Burst Length = 4
Burst Write Mode
Burst Length = 4
Bank0

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