k4d551638h Samsung Semiconductor, Inc., k4d551638h Datasheet - Page 14

• Manufacturer Part Number: k4d551638h
• Description: 256mbit Gddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4D551638H
AC CHARACTERISTICS (I)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
AC CHARACTERISTICS (II)
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge @Normal Precharge
Last data in to Row precharge @Auto Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery + Precharge
Exit self refresh to read command
Power down exit time
Refresh interval time
K4D551638H-LC40
K4D551638H-LC50
250MHz ( 4.0ns )
200MHz ( 5.0ns )
200MHz ( 5.0ns )
166MHz ( 6.0ns )
Frequency
Frequency
Parameter
Cas Latency
Cas Latency
2.5
3
3
3
tRC
tRC
13
12
12
10
tRFC
tRFC
15
14
14
12
tRCDWR
tRCDRD
Symbol
tWR_A
tCDLR
tPDEX
tCCD
tMRD
tRFC
tRAS
tRRD
tXSR
tDAL
tREF
tWR
tRC
tRP
tRAS
tRAS
9
8
8
7
- 14 -
tRCDRD tRCDWR
tRCDRD tRCDWR
3tCK
+tIS
Min
200
13
15
9
4
2
4
2
1
3
3
3
2
7
-
4
4
4
3
-40
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
2
2
2
1tCK
+tIS
Min
200
12
256M GDDR SDRAM
14
tRP
tRP
8
4
2
4
2
3
3
2
1
2
7
-
4
4
4
3
-50
100K
Max
tRRD
tRRD
7.8
-
-
-
-
-
-
-
Rev. 1.3 April 2007
-
-
-
-
-
-
-
3
3
2
2
(Unit : Number of Clock)
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tDAL
tDAL
ns
us
7
7
7
6
Note
1
1
1
Unit
tCK
tCK
Unit
tCK
tCK