RF5110GPCBA-410 RFMD [RF Micro Devices], RF5110GPCBA-410 Datasheet - Page 10

• Manufacturer Part Number: RF5110GPCBA-410
• Description: 3V GSM POWER AMPLIFIER
• Manufacturer: RFMD [RF Micro Devices]

2-10
VAPC
RF IN
VAPC
VCC1
VCC2
J3
J1
RF5110G
+
10 nF
3.3 μF
C21
50 Ω μstrip
50 Ω μstrip
C2
1 nF
10 nF
C3
C5
10 Ω Ferrite
27 pF
1 nF
C19
C6
L2
11 nH
180 Ω
13 pF
1.6 nH
C20
L1
56 pF
R1
C1
L6
Evaluation Board Schematic
GSM850 Lumped Element
10 nF
33 pF
C17
C7
1
2
3
4
16
5
15
6
10 nF
C16
14
1.5 pF
7
C8
13
8
12
11
10
9
33 pF
C15
VCC
60 mils
C9 and C10 share
the same pad.
8.8 nH
15 pF
L3
C9
VCC
33 pF
3.3 μF
1 nF
C13
C14
C18
2 pF
C10
65 mils
1.8 nH
L4
P1-1
P1-2
40 mils
9.1 pF
C11
CON4
P1
1
2
3
4
56 pF
C12
VCC
VCC
GND
GND
50 Ω μstrip
P2-1
Rev A3 060814
CON3
P2
1
2
3
VAPC
GND
GND
RF OUT
J2