RF5110GPCBA-410 RFMD [RF Micro Devices], RF5110GPCBA-410 Datasheet - Page 13

• Manufacturer Part Number: RF5110GPCBA-410
• Description: 3V GSM POWER AMPLIFIER
• Manufacturer: RFMD [RF Micro Devices]

Notes about testing the RF5110G
The test setup shown above includes two attenuators. The 3dB pad at the input is to minimize the effect on the signal
generator as a result of switching the input impedance of the PA. When V
impedance change can cause the signal generator to vary its output signal, either in output level or in frequency. Instead
of an attenuator an isolator may also be used. The attenuator at the output is to prevent damage to the spectrum ana-
lyzer, and should be sized accordingly to handle the power.
It is important not to exceed the rated supply current and output power. When testing the device at higher than nominal
supply voltage, the V
the output it is important to monitor the forward power through a directional coupler. The forward power should not
exceed +36dBm, and V
avoid damage, it is recommended to set the power supply to limit the current during the burst not to exceed the maximum
current rating.
Rev A3 060814
RF Generator
Generator
APC
Pulse
APC
should be adjusted to avoid the output power exceeding +36dBm. During load-pull testing at
needs to be adjusted accordingly. This simulates the behavior for the power control loop. To
3dB
x1 OpAmp
Typical Test Setup
A buffer amplifier is recommended because the current into the
V
monitored with an oscilloscope.
Buffer
APC
changes with voltage. As an alternative, the voltage may be
Power Supply
V-
V+
S+
S-
APC
10dB/5W
is switched quickly, the resulting input
RF5110G
Spectrum
Analyzer
2-13