RF5110GPCBA-410 RFMD [RF Micro Devices], RF5110GPCBA-410 Datasheet - Page 11

• Manufacturer Part Number: RF5110GPCBA-410
• Description: 3V GSM POWER AMPLIFIER
• Manufacturer: RFMD [RF Micro Devices]

Rev A3 060814
VAPC
RF IN
VAPC
VCC1
VCC2
J3
J1
+
3.3 μF
50 Ω μstrip
50 Ω μstrip
C21
10 nF
C2
10 nF
C5
1 nF
C3
10 Ω Ferrite
1 nF
C6
27 pF
L2
C19
15 pF
1.6 nH
11 nH
180 Ω
C20
L1
L6
Evaluation Board Schematic
56 pF
R1
C1
GSM900 Lumped Element
C23 and C27 share
the same pad.
27 pF
10 nF
C23
C17
1
2
3
4
16
5
27 pF
C7
15
6
10 nF
C16
1.5 pF
14
7
C8
13
8
12
11
10
9
47 pF
C15
VCC
C9 and C10 share
the same pad.
55 mils
8.8 nH
15 pF
L3
C9
VCC
3.3 μF
47 pF
1 nF
C13
C14
11 pF
C18
C10
39 mils
P1-1
P1-2
3.6 nH
5.6 pF
C11*
L4
CON4
P1
1
2
3
4
56 pF
*C11 is
adjacent to L4.
C12
RF5110G
VCC
VCC
GND
GND
P2-1
50 Ω μstrip
CON3
P2
1
2
3
VAPC
GND
GND
RF OUT
J2
2-11