RF5110GPCBA-410 RFMD [RF Micro Devices], RF5110GPCBA-410 Datasheet - Page 7

• Manufacturer Part Number: RF5110GPCBA-410
• Description: 3V GSM POWER AMPLIFIER
• Manufacturer: RFMD [RF Micro Devices]

Rev A3 060814
VCC1
VCC2
RF IN
VCC1
VCC2
RF IN
1
2
1
2
3
Requires layout change to standard evaluation board.
C10 and C11 adjacent to L4.
Requires layout change to standard evaluation board.
C10 is adjacent to L4.
C11 is 140 mils from L4.
+
+
3.3 μF
3.3 μF
10 nF
10 nF
100 nH
1 nF
100 pF
10 nF
100 nH
1 nF
100 pF
10 nF
1
1
27 pF
1 nF
27 pF
1 nF
0 Ω
180 Ω
0 Ω
180 Ω
8.2 nH
8.2 nH
10 pF
33 nH
10 pF
33 nH
Application Schematic
Application Schematic
150MHz FM Band
220MHz FM Band
10 nF
10 nF
1
2
3
4
1
2
3
4
VAPC
VAPC
16
16
5
5
V
Efficiency > 45%
P
15
V
Efficiency > 45%
P
15
6
CC
OUT
6
CC
OUT
10 nF
10 nF
= 3.0 V to 3.5 V
= 3.0 V to 3.5 V
= 32 dBm MAX (for 100% duty cycle)
= 32 dBm MAX (for 100% duty cycle)
14
14
7
7
VAPC
VAPC
13
13
8
8
12
11
10
12
11
10
9
47 pF
9
47 pF
VCC
VCC
VCC
VCC
DO1608C-102
DO1608C-102
Coilcraft
3.3 μF
Coilcraft
1 μH
3.3 μF
1 nF
1 μH
33 pF
1 nF
C10
33 pF
C10
1
2
1
2
15 nH
10 nH
39 pF
L4
C11
RF5110G
3
56 pF
56 pF
C11
56 pF
2
RF OUT
RF OUT
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