RF5110GPCBA-410 RFMD [RF Micro Devices], RF5110GPCBA-410 Datasheet - Page 9

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RF5110GPCBA-410

Manufacturer Part Number
RF5110GPCBA-410
Description
3V GSM POWER AMPLIFIER
Manufacturer
RFMD [RF Micro Devices]
Datasheet
Rev A3 060814
VCC1
VCC2
RF IN
+
10 nF
3.3 μF
1 nF
10 nF
865MHz and 902MHz - 928MHz ISM Bands
10 Ω Ferrite
27 pF
1 nF
180 Ω
11 nH
15 pF
1.6 nH
56 pF
Share the same pad.
Application Schematic
10 nF
27 pF
1
2
3
4
VAPC
16
5
27 pF
15
6
10 nF
14
7
VAPC
V
Efficiency > 45%
P
CC
OUT
13
8
= 3.0 V to 3.5 V
1.5 pF
= 32 dBm MAX (for 100% duty cycle)
12
11
10
9
47 pF
VCC
55 mils
8.8 nH
VCC
3.3 μF
47 pF
1 nF
18 pF
C10
39 mils
RF5110G
3.6 nH
L4
5 pF
C11
C11 is
adjacent to L4.
56 pF
RF OUT
2-9

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