k9k4g08u1m Samsung Semiconductor, Inc., k9k4g08u1m Datasheet - Page 11

• Manufacturer Part Number: k9k4g08u1m
• Description: 256m X 8 Bit / 128m X 16 Bit / 512m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9K4G08U1M
K9F2G08U0M K9F2G16U0M
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2GXXU0M-XCB0
DC AND OPERATING CHARACTERISTICS
NOTE : V
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Operating
Maximum DC voltage on input/output pins is V
Current
IL
can undershoot to -0.4V and V
Parameter
Parameter
Page Read with Serial
Access
Program
Erase
Parameter
SS
K9F2GXXU0M-XCB0
K9F2GXXU0M-XIB0
K9F2GXXU0M-XCB0
K9F2GXXU0M-XIB0
IH
Symbol
can overshoot to V
V
V
Symbol
I
OL
CC
SS
I
I
I
I
I
V
V
CC,
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
LI
IH*
OH
IL*
OL
+0.3V which, during transitions, may overshoot to V
1
2
3
1
2
:
T
tRC=30ns, CE=V
I
CE=V
CE=V
WP=PRE=0V/V
V
V
K9F2GXXU0M :I
K9F2GXXU0M :I
K9F2GXXU0M :V
A
OUT
=0 to 70 C, K9F2GXXU0M-XIB0
IN
OUT
=0 to Vcc(max)
CC
=0mA
=0 to Vcc(max)
IH
CC
+0.4V for durations of 20 ns or less.
, WP=PRE=0V/V
Min
2.7
-0.2,
0
Test Conditions
(Recommended operating conditions otherwise noted.)
11
CC
OH
OL
IL
OL
-
-
-
-
=2.1mA
=-400 A
=0.4V
Symbol
V
CC
T
T
IN/OUT
V
Ios
BIAS
STG
CC
Typ.
3.3
0
:
T
A
=-40 to 85 C)
CC
0.8xVcc
+2.0V for periods <20ns.
Min
-0.3
2.4
8
-
-
-
-
-
-
FLASH MEMORY
-0.6 to + 4.6
-0.6 to + 4.6
-10 to +125
-40 to +125
-65 to +150
Rating
Max
3.6
0
5
Typ
15
10
10
-
-
-
-
-
-
-
Preliminary
Vcc+0.3
0.2xVcc
Max
0.4
30
50
10
10
1
-
-
Unit
V
V
Unit
mA
V
C
C
Unit
mA
mA
V
A