k9k4g08u1m Samsung Semiconductor, Inc., k9k4g08u1m Datasheet - Page 21

• Manufacturer Part Number: k9k4g08u1m
• Description: 256m X 8 Bit / 128m X 16 Bit / 512m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

Serial Access Cycle after Read
I/Ox
K9K4G08U1M
K9F2G08U0M K9F2G16U0M
Serial Access Cycle after Read
I/Ox
CE
RE
R/B
CE
RE
R/B
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x
t
t
RR
RR
NOTES : Transition is measured 200mV from steady state voltage with load.
NOTES : Transition is measured 200mV from steady state voltage with load.
t
t
CEA
CEA
t
t
REA
REA
t
t
RP
RP
This parameter is sampled and not 100% tested.
This parameter is sampled and not 100% tested.
t
t
RC
RC
Dout
Dout
(CLE=L, WE=H, ALE=L)
(CLE=L, WE=H, ALE=L)
t
t
REH
REH
t
t
REA
REA
21
Dout
Dout
t
t
RHZ*
RHZ*
t
t
REA
REA
FLASH MEMORY
Dout
Dout
t
t
t
t
t
t
t
t
CHZ*
OH
RHZ*
OH
Preliminary
CHZ*
OH
RHZ*
OH