k9k4g08u1m Samsung Semiconductor, Inc., k9k4g08u1m Datasheet - Page 40

• Manufacturer Part Number: k9k4g08u1m
• Description: 256m X 8 Bit / 128m X 16 Bit / 512m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9K4G08U1M
K9F2G08U0M K9F2G16U0M
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down. A recovery time of minimum 10 s is required before internal circuit gets ready for any command
sequences as shown in Figure 18. The two step command sequence for program/erase provides additional software protection.
Figure 18. AC Waveforms for Power Transition
WP
WE
V
CC
3.3V device : ~ 2.5V
10 s
High
40
FLASH MEMORY
3.3V device : ~ 2.5V
Preliminary
IL