k9k4g08u1m Samsung Semiconductor, Inc., k9k4g08u1m Datasheet - Page 25

• Manufacturer Part Number: k9k4g08u1m
• Description: 256m X 8 Bit / 128m X 16 Bit / 512m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

Page Program Operation
K9K4G08U1M
K9F2G08U0M K9F2G16U0M
CLE
CE
WE
ALE
RE
R/B
I/Ox
x x x x
x x x x
x x x x
x x x x
x x x x
Input Command
SerialData
80h
t
WC
x x x x x
x x x x x
x x x x x
x x x x x
x x x x x
Co.l Add1 Col. Add2
Column Address
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Row Add1
t
WC
Row Address
Row Add2 Row Add3
X8 device : m = 2112byte
X16 device : m = 1056word
t
ADL
25
1 up to m Byte
Din
Serial Input
N
t
WC
Din
M
Program
Command
10h
t
WB
x x x x x x x x x
x x x x x x x x x
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t
FLASH MEMORY
PROG
Preliminary
Read Status
Command
I/O
I/O
0
0
=0 Successful Program
=1 Error in Program
70h
I/O
0