k9k4g08u1m Samsung Semiconductor, Inc., k9k4g08u1m Datasheet - Page 2

• Manufacturer Part Number: k9k4g08u1m
• Description: 256m X 8 Bit / 128m X 16 Bit / 512m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9K4G08U1M
K9F2G08U0M K9F2G16U0M
Document Title
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
256M x 8 Bit / 128M x 16 Bit/ 512M x 8 Bit NAND Flash Memory
Revision No
0.5
0.6
0.7
History
1. The value of AC parameters for K9F2G08U0M are changed.
2. The definition and value of setup and hold time are changed.
3. The tADL(Address to Data Loading Time) is added.
4. Added addressing method for program operation
1. PKG(TSOP1, WSOP1) Dimension Change
1. Technical note is changed
2. Notes of the AC timing characteristics are added
3. The description of Copy-back program is changed
4. 52ULGA Package is added
- tADL Minimum 100ns (Page 11, 22~25)
-
to the WE rising edge of first data cycle at program operation.
tADL is the time from the WE rising edge of final address cycle
ITEM
ITEM
t
t
t
t
t
t
t
t
t
t
t
t
t
REH
REA
CEA
t
t
t
t
ADL
CLS
CLH
ALH
WC
WH
ALS
WP
RC
RP
CS
CH
DS
DH
K9F2GXXQ0M
K9F2G16U0M
Before
45
25
15
50
25
15
30
45
25
10
35
10
25
10
20
10
-
K9F2G08U0M
2
K9F2G08U0M
After
100
30
15
10
30
15
10
18
23
10
15
10
10
5
5
5
5
FLASH MEMORY
Draft Date
Apr. 22.2004
May. 19. 2004
Jan. 21. 2005
Preliminary
Remark
Preliminary
Preliminary
Preliminary