k9k4g08u1m Samsung Semiconductor, Inc., k9k4g08u1m Datasheet - Page 17

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k9k4g08u1m

Manufacturer Part Number
k9k4g08u1m
Description
256m X 8 Bit / 128m X 16 Bit / 512m X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K9K4G08U1M
K9F2G08U0M K9F2G16U0M
NAND Flash Technical Notes
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
Page 63
Page 31
Page 2
Page 1
Page 0
From the LSB page to MSB page
DATA IN: Data (1)
Data register
(64)
(32)
(3)
(2)
(1)
:
:
(Continued)
Data (64)
17
Page 63
Page 31
Page 2
Page 1
Page 0
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data register
FLASH MEMORY
(64)
(32)
(1)
(3)
(2)
:
:
Data (64)
Preliminary

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