CHA2066-99F/00 UMS [United Monolithic Semiconductors], CHA2066-99F/00 Datasheet
CHA2066-99F/00
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CHA2066-99F/00 Summary of contents
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... Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography supplied in chip form. ...
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... Storage temperature range (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. (3) For a typical biasing circuit : Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 10-16GHz Low Noise Amplifier Test ...
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... MS11 PS11 GHz dB ° 1.00 -0.25 -16.1 2.00 -0.54 -31.8 3.00 -0.88 -48.8 4.00 -1.38 -68.9 5.00 -2.32 -95.1 6.00 -4.51 -131.2 7.00 -8.90 -177.3 8.00 -12.32 122.2 9.00 -10.70 61.8 10.00 -8.32 24.9 11.00 -7.00 -1.8 12.00 -6.48 -23.4 13.00 -6.63 -42.1 14.00 -7.33 -58.2 15.00 -8.51 -71.5 16.00 -9.93 -79.7 17.00 -11.00 -82.6 18.00 -11.11 -83.8 19.00 -10.35 -88.5 20.00 -9.53 -100.1 21.00 -8.97 -117.1 22.00 -9.04 -137.0 23.00 -9.70 -161.0 24.00 -10.97 174.2 25.00 -12.61 144.5 26.00 -14.42 110.6 Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 MS12 PS12 MS21 dB ° dB -82.22 90.1 -46.86 -83.38 37.9 -46.99 -84.02 17.8 -30.57 -72.90 21.7 -12.70 -62.06 8.4 -1.44 -52.22 -25.9 7.98 -45.23 -71.4 13.83 -41.37 -112.2 16.32 -39.16 -144.4 17.19 -37.57 -170.5 17.48 -36.41 168.3 17.54 -35.43 149.3 17.55 -34.71 131.5 17.53 -34.27 114.2 17.44 -34.16 98.4 17.23 -34.42 83.4 16.85 -35.18 70.8 16.29 -36.29 61.5 15.59 -37.52 58.2 14.75 -38.26 59.5 13.82 -37.98 64.4 12.71 -36.56 64.7 11.36 -35.28 56.8 9.72 -34.49 47.1 7.77 -34.15 36.2 5 ...
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... Typical Gain and Noise Figure measurements on wafer. Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 10-16GHz Low Noise Amplifier Gain dBS22 Frequency ( GHz ) GAIN NF 13 ...
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... Pin ( dBm ) at 12GHz Typical Output Power measurements in test-jig. Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 dBS11 dBS21 Frequency ( GHz ) ...
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... A Pad size 100x100µm, chip thickness 100µm Dimensions : 1520 x 1080µm 115 1010 410 225 35 Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 10-16GHz Low Noise Amplifier 1520µ ...
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... Low Noise and low consumption : ( Equivalent to A,B,C,D and Vd=4V ; G1=+1.4V ; G2=+1.4V). Low Noise and high output power : ( Equivalent to A,B,C,D and Vd=5V ; G1=+1.4V ; G2=+4.0V). A file is available on request to help the biasing option tuning. Ref. : DSCHA20661257 -14-Sept-01 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 100pF IN ...
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... CHA2066 Ordering Information Chip form : CHA2066-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...