CHA2097A99F/00 UMS [United Monolithic Semiconductors], CHA2097A99F/00 Datasheet
CHA2097A99F/00
Related parts for CHA2097A99F/00
CHA2097A99F/00 Summary of contents
Page 1
Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2097a is a variable gain broadband three-stage monolithic amplifier designed for a wide range of applications, from military to commercial communication backside of the chip is both RF ...
Page 2
CHA2097a Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd1,2,3 = 3.5V Symbol Fop Operating frequency range (1) G Small signal gain (1) Small signal gain flatness ( Reverse isolation (1) P1dB Output power at 1dB gain compression ...
Page 3
Variable Gain Amplifier Typical Scattering Parameters (On wafer Sij measurements): Bias Conditions: Vd=3.5V, Vg=0V, Vctrl=-1V, Id=140mA F(GHz) S11 S11 dB /° 10 -4,75 -115,2 11 -5,92 -124 12 -6,95 -131 13 -8,07 -137 -142,7 15 -9,96 -147,7 ...
Page 4
CHA2097a Typical Scattering Parameters (On wafer Sij measurements): Bias Conditions: Vd=3.5V, Vg=0V, Vctrl=-0.3V, Id=140mA F(GHz) S11 S11 dB /° 10 -21,22 -127,3 11 -21,29 -137,1 12 -21,49 -145,7 13 -21,84 -154 14 -22,04 -162,3 15 -22,52 -169,6 16 -23,04 -176,4 ...
Page 5
Variable Gain Amplifier Typical On wafer measurements: Tamb = +25°C Gain and phase versus voltage control on CL pad : CHA2097 Vd=3,5v Vg=0v Id=140mA 20 18 Gain at 20GHz Gain at 40GHz 6 4 ...
Page 6
CHA2097a Chip Assembly and Mechanical Data IN 100pF To Vctrl DC supply feed Note : Supply feed should be capacitively bypassed. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA20978021 Route Départementale 128 , B.P.46 ...
Page 7
Variable Gain Amplifier Typical Bias Tuning The circuit schematic is given below : IN A ttenuator For gain control operation, The three drain biases are connected altogether same way, all the gate biases are connected together at ...
Page 8
... Ordering Information Chip form : CHA2097a99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...