CHA2093-99F/00 UMS [United Monolithic Semiconductors], CHA2093-99F/00 Datasheet

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CHA2093-99F/00

Manufacturer Part Number
CHA2093-99F/00
Description
20-30GHz Low Noise Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet
Description
The CHA2093 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
Main Features
■ Broad band performance 20-30GHz
■ 2.2dB noise figure, 20-30GHz
■ 15dB gain,
■ Low DC power consumption, 50mA
■ 20dBm 3rd order intercept point
■ Chip size : 1,67 x 1,03 x 0.1mm
Main Characteristics
Tamb = +25°C
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Symbol
Ref. : DSCHA20939042
NF
G
G
Noise figure, 20-30GHz
Gain
Gain flatness
0.5dB gain flatness
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
20-30GHz Low Noise Amplifier
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
1/8
IN
20
18
16
14
12
10
8
6
4
2
0
10
Specifications subject to change without notice
On wafer typical measurements.
Min
15
13
Vg 1
20
Typ
2.2
15
0.5
50
Vg 2
25
CHA2093
Max
3.0
30
25
1.0
Frequency ( GHz )
Vd
35
Unit
7034
dB
dB
dB
40
10
9
8
7
6
5
4
3
2
1
0
OUT

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CHA2093-99F/00 Summary of contents

Page 1

... Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography supplied in chip form. ...

Page 2

... Top Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA20939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier Parameter (1) ...

Page 3

... Ref. : DSCHA20939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 MS12 PS12 MS21 dB ° dB -62.29 -138.5 4.35 -58.39 -130.1 7.36 -53.05 -130.3 9.77 -49.08 -146.8 11.61 -46.97 -163.9 12.9 -44.52 173.2 13.86 -42.23 160.2 14.55 -40.43 138.2 15 -39.41 126.2 15.36 -38 104 ...

Page 4

... Typical Gain and Noise Figure measurements on wafer. Ref. : DSCHA20939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier DBS11 DBS22 18 20 ...

Page 5

... Typical Output Power and Gain measurements in test jig Ref. : DSCHA20939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 F=20GHz - Input power (dBm) F=30GHz ...

Page 6

... Typical Chip Assembly IN To Vg1 DC Gate supply feed Dimensions : 1670 x 1030µm Mechanical data 1030 445 Ref. : DSCHA20939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier Drain supply feed 47pF 7034 ...

Page 7

... The first step to bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then Vg1 is reduced to obtain current through the amplifier. Ref. : DSCHA20939042 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Page 8

... CHA2093 Ordering Information Chip form : CHA2093-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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