CHA2090-99F/00 UMS [United Monolithic Semiconductors], CHA2090-99F/00 Datasheet

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CHA2090-99F/00

Manufacturer Part Number
CHA2090-99F/00
Description
17-24GHz Low Noise Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CHA2090-99F/00
Manufacturer:
UMS
Quantity:
1 400
Description
The CHA2090 is a three-stage self-biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
Main Features
§
§
§
§
§
Main Characteristics
Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND
VSWRout Output VSWR
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
VSWRin
Symbol
Fop
NF
Broadband performance 17-24GHz
2.0dB noise figure
23dB gain,
Low DC power consumption, 55mA
Chip size : 2,170 x 1,270x 0.1mm
Ref. : DSCHA20909347 – 13 Dec. 99
G
Operating frequency range
Noise figure
Gain
Input VSWR
1dB gain flatness
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
17-24GHz Low Noise Amplifier
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
1/8
30
25
20
15
10
5
0
Specifications subject to change without notice
5
7
On wafer typical measurements
Min
9 11 13 15 17 19 21 23 25 27 29 31 33 35
17
19
Frequency ( GHz )
Typ
2.0
23
CHA2090
Max
3.0
2:1
2:1
24
Unit
GHz
dB
dB
12
10
8
6
4
2
0

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CHA2090-99F/00 Summary of contents

Page 1

... NF Noise figure G Gain VSWRin Input VSWR VSWRout Output VSWR ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA20909347 – 13 Dec. 99 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 ...

Page 2

... Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. (3) See chip biasing option page 7/8. Ref. : DSCHA20909347 – 13 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 17-24GHz Low Noise Amplifier ...

Page 3

... Ref. : DSCHA20909347 – 13 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 MS12 PS12 MS21 mod pha mod dB deg dB -89.62 -92.0 -41.76 -97.43 26.6 -48.17 -87.21 -23.0 -52.46 -84.87 -135.7 -61.22 -83.35 120.1 -35.86 -66 ...

Page 4

... Ref. : DSCHA20909347 – 13 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 17-24GHz Low Noise Amplifier Frequency ( GHz ) Gain Frequency ( GHz ) ...

Page 5

... Gain - Ref. : DSCHA20909347 – 13 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Frequency ( GHz ) dBS11 dBS22 Frequency ( GHz ) 5/8 Specifications subject to change without notice ...

Page 6

... Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed diameter gold wire preferred. ( Chip thickness : 100µm. Pad size : 100x80µm² ) Ref. : DSCHA20909347 – 13 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Page 7

... We propose two standard biasing : Low Noise and low consumption : ( Equivalent to A,B,C,D,E F: non connected and Vd=4.5V ; G1=G2=G3=+1.V ). Low Noise and higher output power Ref. : DSCHA20909347 – 13 Dec. 99 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 internal Drain to Source voltage ). ...

Page 8

... CHA2090 Ordering Information Chip form : CHA2090-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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