CHA2292-99F/00 UMS [United Monolithic Semiconductors], CHA2292-99F/00 Datasheet
CHA2292-99F/00
Related parts for CHA2292-99F/00
CHA2292-99F/00 Summary of contents
Page 1
... Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2292 is a high gain monolithic low noise amplifier with variable gain designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process ...
Page 2
... Maximum peak input power overdrive (2) Ta Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22922108 - 18-Apr.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter V5= Vd2,3,4 Vc Parameter ...
Page 3
... Pout (dBm -30 -25 Gain & Output power @ 18-20 GHz Ref. : DSCHA22922108 - 18-Apr.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 (dB Frequency (GHz) -20 Input power (dBm) 3/6 Specifications subject to change without notice CHA2292 ...
Page 4
... NF 3 Vc=+1.2V 2 Vc=+0.8V 1 Vc= 0V Vc=-0. Ref. : DSCHA22922108 - 18-Apr.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 -20 Input power (dBm Frequency ( GHz) Gain & Noise Figure versus Vc 4/6 Specifications subject to change without notice CHA2292 22GHz ...
Page 5
... Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad:100 x 100 µm ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA22922108 - 18-Apr.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 234 ...
Page 6
... Ordering Information Chip form : CHA2292-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...