CHA2098RBF/24 UMS [United Monolithic Semiconductors], CHA2098RBF/24 Datasheet

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CHA2098RBF/24

Manufacturer Part Number
CHA2098RBF/24
Description
20-33GHz High Gain Buffer Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet
Description
The monolithic microwave IC (MMIC) in the
package is a high gain broadband three-
stage monolithic buffer amplifier. It is
designed for a wide range of applications,
from military to commercial communication
systems. The circuit is manufactured with a
PM-HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
SMD Package Dimensions
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated
by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the
package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN
Ref. : DSCHA2098RBF2057 -26-Feb.-02
GaAs Monolithic Microwave IC in SMD leadless package
20-33GHz High Gain Buffer Amplifier
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
United Monolithic Semiconductors S.A.S.
1/6
Main Features
■ Broadband performance: 20-40GHz
■ Small signal gain 18dB (typical)
■ SMD leadless package
■ Pout-1dB : +15dBm (typical).
■ Dimensions: 5.08 x 5.08 x 0.97 mm
Specifications subject to change without notice
CHA2098RBF
3
1."

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CHA2098RBF/24 Summary of contents

Page 1

High Gain Buffer Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The monolithic microwave IC (MMIC) in the package is a high gain broadband three- stage monolithic buffer amplifier designed for a wide range of ...

Page 2

CHA2098RBF Schematic Typical Bias Conditions for an ambient Temperature of +25°C Symbol Pin No Drain bias voltage Vg1 1 Gate bias voltage (1st stage) Vg2, Vg3 2 Gate bias voltage (2nd and 3rd stage Drain current ...

Page 3

High Gain Buffer Amplifier Typical results on PCB (recommended motherboard layout) Vd=3.5V, Id adjusted at 150mA Input Return Loss (dB -10 -15 - Ref. : DSCHA2098RBF2057 -26-Feb.-02 Route Départementale ...

Page 4

CHA2098RBF Footprint Ref. : DSCHA2098RBF2057 -26-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-33GHz High Gain Buffer Amplifier 4/6 Specifications ...

Page 5

High Gain Buffer Amplifier Application note The design of the motherboard has a strong impact on the over all performance since the transition from the motherboard to the package is comparably large. In case of the SMD type packages ...

Page 6

... United Monolithic Semiconductors S.A.S. Ref. : DSCHA2098RBF2057 -26-Feb.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-33GHz High Gain Buffer Amplifier CHA2098RBF/24 6/6 Specifications subject to change without notice " ...

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