MBM29F080A-55PF SPANSION [SPANSION], MBM29F080A-55PF Datasheet - Page 3

• Manufacturer Part Number: MBM29F080A-55PF
• Description: FLASH MEMORY CMOS 8M (1M x 8) BIT
• Manufacturer: SPANSION [SPANSION]

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MBM29F080A
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This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to
be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within 1
second (if already completely preprogrammed). The MBM29F080A is erased when shipped from the factory.
The MBM29F080A device also features hardware sector group protection. This feature will disable both program
and erase operations in any combination of eight sector groups of memory. A sector group consists of four
adjacent sectors grouped in the following pattern: sectors 0-1, 2-3, 4-5, 6-7, 8-9, 10-11, 12-13, and 14-15.
Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of
time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.
The device features single 5.0 V power supply operation for both read and program functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of
DQ
been completed, the device automatically resets to the read mode.
The MBM29F080A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded
Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into
the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs
during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read
mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.
Fujitsu's Flash technology combines years of EPROM and E
of quality, reliability, and cost effectiveness. The MBM29F080A memory electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM
programming mechanism of hot electron injection.
FEATURES
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
40-pin TSOP(I) (Package Suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
44-pin SOP (Package Suffix: PF)
Minimum 100,000 write/erase cycles
High performance
55 ns maximum access time
Sector erase architecture
Uniform sectors of 64 K bytes each
Any combination of sectors can be erased. Also supports full chip erase.
Embedded Erase™ Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program™ Algorithms
Automatically programs and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Low V
7
, or by the Toggle Bit I feature on DQ
CC
write inhibit
3.2 V
-55/-70/-90
6
or RY/BY output pin. Once the end of a program or erase cycle has
2
PROM experience to produce the highest levels
CC
detector automatically
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