DAC1408D650C1 NXP [NXP Semiconductors], DAC1408D650C1 Datasheet - Page 9

• Manufacturer Part Number: DAC1408D650C1
• Description: Dual 14-bit DAC up to 650 Msps 2, 4 or 8 interpolating
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
Table 5.
V
typical values measured at V
sample rate; PLL off unless otherwise specified.
DAC1408D650
Preliminary data sheet
Symbol
Reference voltage output (GAPOUT)
V
I
ΔV
Analog auxiliary outputs (AUXAP, AUXAN, AUXBP and AUXBN)
I
V
N
Input timing (Vin_p / Vin_n)
f
f
Output timing (IOUTAP, IOUTAN, IOUTBP, IOUTBN)
f
t
NCO frequency range; f
f
f
Low power NCO frequency range; f
f
f
Dynamic performances
SFDR
O(ref)
O(aux)
data
bit
s
s
NCO
step
NCO
step
DDA(1V8)
O(ref)
O(aux)
DAC(aux)mono
O(ref)
= V
Characteristics
DDD
Parameter
reference output
voltage
reference output
current
reference output
voltage variation
auxiliary output current differential outputs
auxiliary output
voltage
auxiliary DAC
monotonicity
data rate
bit rate
sampling rate
settling time
NCO frequency
step frequency
NCO frequency
step frequency
spurious-free dynamic
range
= 1.7 V to 1.9 V; V
s
= 650 Msps
…continued
DDA(1V8)
DDA(3V3)
= V
s
= 650 Msps
DDD
Conditions
external voltage 1.2 V
compliance range
guaranteed
2× interpolation
4× interpolation
8× interpolation
serial input
up to 0.5 LSB
register value = 00000000h
register value = FFFFFFFFh D
reg value = 00000000h
reg value = F8000000h
f
f
f
DAC1408D; up to 650 Msps; 2×, 4× or 8× interpolating with JESD204A
data
data
data
All information provided in this document is subject to legal disclaimers.
f
f
f
= 3.0 V to 3.6 V; AGND and GND are shorted together; T
o
o
o
= 1.8 V; V
= 4 MHz at −1 dBFS
= 19 MHz at −1 dBFS
= 19 MHz at −1 dBFS
= 80 Msps; f
= 160 Msps; f
= 312.5 Msps; f
Rev. 02 — 11 August 2010
DDA(3V3)
s
s
= 640 Msps; ×8; BW = f
= 640 Msps; ×4; BW = f
s
= 625 Msps; ×2; BW = f
= 3.3 V; T
Test
C
C
C
I
D
D
D
D
D
D
D
D
D
D
D
D
D
C
C
I
amb
[1]
= +25
data
°
C; R
data
Min
<tbd>
-
-
-
0
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
data
/ 2; PLL on
/ 2
L
/ 2
DAC1408D650
= 50
Typ
1.25
40
117
2.2
-
10
-
-
-
-
-
20
0
650
0.151
0
630
20.3
76
74
74
Ω
; I
O(fs)
amb
= 20 mA; maximum
<tbd>
2
-
81.25
-
-
-
-
Max
-
-
-
312.5
162.5
3.125
650
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
=
−
40
°
C to +85
Unit
V
μA
ppm/°C
mA
V
bits
Msps
Msps
Msps
Gbps
Msps
ns
MHz
MHz
Hz
MHz
MHz
MHz
dBc
dBc
dBc
9 of 98
°
C;