M58LT128HSB8ZA6 NUMONYX [Numonyx B.V], M58LT128HSB8ZA6 Datasheet - Page 37

• Manufacturer Part Number: M58LT128HSB8ZA6
• Manufacturer: NUMONYX [Numonyx B.V]

M58LT128HST, M58LT128HSB
6
6.1
6.2
Configuration Register
The Configuration Register is used to configure the type of bus access that the memory
performs. Refer to
The Configuration Register is set through the Command Interface using the Set
Configuration Register command. After a reset or power-up, the device is configured for
Asynchronous Read (CR15 = 1). The Configuration Register bits are described in
and specify the selection of the burst length, burst type, burst X latency, and the Read
operation. Refer to Figures
Read Select bit (CR15)
The Read Select bit, CR15, is used to switch between Asynchronous and Synchronous
Read operations.
When the Read Select bit is set to ’1’, Read operations are asynchronous; when the Read
Select bit is set to ’0’, Read operations are synchronous.
Synchronous Burst Read is supported in both parameter and main blocks, and can be
performed across banks.
On reset or power-up the Read Select bit is set to ’1’ for asynchronous access.
X-Latency bits (CR13-CR11)
The X-Latency bits are used during Synchronous Read operations to set the number of
clock cycles between the address being latched and the first data becoming available. Refer
to
For correct operation the X-Latency bits can only assume the values in
Configuration
Table 10
the device and the frequency used to read the Flash memory in Synchronous mode.
Table 10.
Figure 5: X-latency and data output configuration
shows how to set the X-Latency parameter, taking into account the speed class of
30 MHz
40 MHz
52 MHz
fmax
X-Latency Settings
Register.
Chapter 7: Read modes
5
and
6
for examples of synchronous burst configurations.
t
33 ns
25 ns
19 ns
K
min
for details on Read operations.
example.
X-Latency min
Configuration Register
Table 11:
3
4
5
Table 11
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