M58LT128HSB8ZA6 NUMONYX [Numonyx B.V], M58LT128HSB8ZA6 Datasheet - Page 51

no-image

M58LT128HSB8ZA6

Manufacturer Part Number
M58LT128HSB8ZA6
Description
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M58LT128HSB8ZA6
Manufacturer:
ST
Quantity:
10 720
Part Number:
M58LT128HSB8ZA6
Manufacturer:
ST
0
Part Number:
M58LT128HSB8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M58LT128HSB8ZA6E
Manufacturer:
ST
Quantity:
20 000
Part Number:
M58LT128HSB8ZA6F
Manufacturer:
Numonyx/ST Micro
Quantity:
135
Part Number:
M58LT128HSB8ZA6F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
M58LT128HST, M58LT128HSB
10
Table 16.
Erase
Program
Suspend latency
Program/erase cycles
(per block)
Parameter
(3)
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
best case is when all the bits in the block are at ‘0’ (preprogrammed). The worst case is
when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the system overhead is
negligible with respect to the erase time. In the M58LT128HST/B the maximum number of
program/erase cycles depends on the V
Program/erase times and endurance cycles
Table
16. Exact erase times may change depending on the memory array condition. The
Parameter block (16 Kword)
Main block (64
Kword)
Single word
Buffer (32 words) (Buffer Program)
Main block (64 Kword)
Program
Erase
Main blocks
Parameter blocks
Condition
Preprogrammed
Not preprogrammed
Word program
Buffer program
PP
Program and erase times and endurance cycles
voltage supply used.
(1) (2)
100,000
100,000
Min
Typ
384
768
0.4
1.2
1.5
12
12
5
5
Typical after
100kW/E
Cycles
1
3
Max
180
180
2.5
10
20
4
4
51/110
cycles
cycles
Unit
ms
µs
µs
µs
µs
µs
s
s
s

Related parts for M58LT128HSB8ZA6