CY14E256L-D45I CYPRESS [Cypress Semiconductor], CY14E256L-D45I Datasheet

no-image

CY14E256L-D45I

Manufacturer Part Number
CY14E256L-D45I
Description
256 Kbit (32K x 8) nvSRAM
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Features
Cypress Semiconductor Corporation
Document Number: 001-06968 Rev. *G
25 ns, 35 ns, and 45 ns Access Times
Pin Compatible with STK14C88
Hands Off Automatic STORE on Power Down with External
68 µF Capacitor
STORE to QuantumTrap Nonvolatile Elements is Initiated by
Software, Hardware, or AutoStore on Power Down
RECALL to SRAM Initiated by Software or Power Up
Unlimited READ, WRITE, and RECALL Cycles
1,000,000 STORE Cycles to QuantumTrap
100 Year Data Retention to QuantumTrap
Single 5V+10% Operation
Commercial and Industrial Temperature
32-pin SOIC Package (RoHS Compliance)
CDIP (300 mil) Package
Logic Block Diagram
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
A
A
A
A
A
A
A
A
A
0
1
2
3
4
7
5
6
5
6
7
8
9
13
14
11
12
A
0
COLUMN DEC
COLUMN I/O
A
STATIC RAM
1
512 X 512
ARRAY
198 Champion Court
A
2
A
3
A
4
Quantum Trap
A
10
512 X 512
STORE
RECALL
Functional Description
The Cypress CY14E256L is a fast static RAM with a nonvolatile
element in each memory cell. The embedded nonvolatile
elements incorporate QuantumTrap technology producing the
world’s most reliable nonvolatile memory. The SRAM provides
unlimited read and write cycles, while independent, nonvolatile
data resides in the highly reliable QuantumTrap cell. Data
transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power down. On
power up, data is restored to the SRAM (the RECALL operation)
from the nonvolatile memory. Both the STORE and RECALL
operations are also available under software control. A hardware
STORE is initiated with the HSB pin.
256 Kbit (32K x 8) nvSRAM
San Jose
V
CONTROL
CONTROL
CC
RECALL
POWER
STORE/
,
CA 95134-1709
V
CAP
SOFTWARE
DETECT
Revised May 18, 2009
CY14E256L
HSB
A
408-943-2600
13
OE
CE
WE
-
A
0
[+] Feedback

Related parts for CY14E256L-D45I

CY14E256L-D45I Summary of contents

Page 1

... Document Number: 001-06968 Rev. *G 256 Kbit (32K x 8) nvSRAM Functional Description The Cypress CY14E256L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while independent, nonvolatile data resides in the highly reliable QuantumTrap cell ...

Page 2

... V Power Supply AutoStore Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM CAP to nonvolatile elements. Document Number: 001-06968 Rev. *G Figure 1. Pin Diagram: 32-Pin SOIC/DIP Description CY14E256L Page [+] Feedback ...

Page 3

... Device Operation The CY14E256L nvSRAM is made up of two functional compo- nents paired in the same physical cell. These are an SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a standard fast static RAM. Data in the SRAM is transferred to the nonvolatile cell (the STORE operation) or from the nonvolatile cell to SRAM (the RECALL operation) ...

Page 4

... V cycle is automatically initiated and takes t Document Number: 001-06968 Rev the CY14E256L WRITE state at the end of power up RECALL, the SRAM data is corrupted. To help avoid this situation Kohm resistor is connected either between WE and system V ...

Page 5

... STORE, the WRITE is inhibited until a negative transition detected. This protects against inadvertent writes during power up or brown out conditions. Noise Considerations The CY14E256L is a high speed memory. It must have a high frequency bypass capacitor of approximately 0.1 µF connected between V and V ...

Page 6

... CE and OE LOW and WE HIGH for output behavior. 4. The six consecutive addresses must be in the order listed. WE must be high during all six consecutive CE controlled cycles to enable a nonvolatile cycle. 5. While there are 15 addresses on the CY14E256L, only the lower 14 are used to control software modes. Document Number: 001-06968 Rev. *G manufacturing test to ensure these system routines work consistently ...

Page 7

... Max, V < V < Max, V < V < > that is where the power supply connection is made CY14E256L Ambient Temperature V CC 0°C to +70°C 4.5V to 5.5V -40°C to +85°C 4.5V to 5.5V Min Max Unit Commercial Industrial 100 ...

Page 8

... T = 25° MHz 3.0V CC [8] Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. Figure 6. AC Test Loads 5.0V Output 512Ω CY14E256L Min Max Unit V – 0 0.5 2.4 V 0 260 ...

Page 9

... WE and HSB must be HIGH during SRAM Read cycles. 10. Device is continuously selected with CE and OE both Low. 11. Measured ±200 mV from steady state output voltage. Document Number: 001-06968 Rev Description Min Max CY14E256L Unit Min Max Min Max ...

Page 10

... WC t SCE PWE t SD DATA VALID t HZWE HIGH IMPEDANCE [13, 14 SCE PWE t SD DATA VALID HIGH IMPEDANCE CY14E256L Unit Min Max Min Max ...

Page 11

... Document Number: 001-06968 Rev. *G Description Rise Time HSB low SWITCH Figure 11. AutoStore/Power Up RECALL . SWITCH . If an SRAM WRITE has not taken place since the last nonvolatile cycle, HSB is released and no store SWITCH CY14E256L CY14E256L Unit Min Max μs 550 10 ms μs 1 4.0 4 ...

Page 12

... The six consecutive addresses must be read in the order listed in the Mode Selection table. WE must be HIGH during all six consecutive cycles. Document Number: 001-06968 Rev. *G [19 Description Min Max DATA VALID CY14E256L Unit Min Max Min Max [19 ...

Page 13

... Hardware STORE Pulse Width PHSB HLHX t Hardware STORE Low to STORE Busy HLBL Switching Waveforms Note 20 only applicable after t is complete. DHSB STORE Document Number: 001-06968 Rev. *G Description Figure 13. Hardware STORE Cycle CY14E256L CY14E256L Unit Min Max 700 300 ns Page [+] Feedback ...

Page 14

... CY14E256L-SZ35XC CY14E256L-SZ35XIT CY14E256L-SZ35XI 45 CY14E256L-SZ45XCT CY14E256L-SZ45XC CY14E256L-SZ45XIT CY14E256L-SZ45XI CY14E256L-D45I The above table contains Final information. Please contact your local Cypress sales representative for availability of these parts Document Number: 001-06968 Rev. *G Option Tape & Reel Blank - Std. Temperature Commercial (0 to 70° Industrial (-40 to 85°C) ...

Page 15

... SEATING PLANE 0.090[2.286] 0.100[2.540] 0.004[0.101] 0.026[0.660] 0.032[0.812] 0.004[0.101] 0.0100[0.254] CY14E256L MIN. MAX. PART # S32.3 STANDARD PKG. SZ32.3 LEAD FREE PKG. 51-85058 *A 0.006[0.152] 0.021[0.533] 0.012[0.304] 0.041[1.041] 51-85127-*A ...

Page 16

... Package Diagram (continued) Document Number: 001-06968 Rev. *G Figure 15. 32-Pin (300 Mil) CDIP (001-51694) CY14E256L 001-51694 ** Page [+] Feedback ...

Page 17

... Added footnote 6 and 7 Added t and V VSBL RESET Added Thermal resistance values Changed parameter Renamed GLAX HACE Renamed RESTORE DHSB Updated Figure 13 GVCH/PYRS Changed part number from CY14E256L-D45XI to CY14E256L-D45I CY14E256L - 0. 0. parameter to Autostore or Power-up Recall table SA Page [+] Feedback ...

Page 18

... All products and company names mentioned in this document may be the trademarks of their respective holders. PSoC Solutions psoc.cypress.com General clocks.cypress.com Low Power/Low Voltage Precision Analog LCD Drive image.cypress.com CAN 2.0b USB Revised May 18, 2009 CY14E256L psoc.cypress.com/solutions psoc.cypress.com/low-power psoc.cypress.com/precision-analog psoc.cypress.com/lcd-drive psoc.cypress.com/can psoc.cypress.com/usb Page [+] Feedback ...

Related keywords