CY14E256L-D45I CYPRESS [Cypress Semiconductor], CY14E256L-D45I Datasheet - Page 17

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CY14E256L-D45I

Manufacturer Part Number
CY14E256L-D45I
Description
256 Kbit (32K x 8) nvSRAM
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Document History Page
Document Number: 001-06968 Rev. *G
Document Title: CY14E256L 256 Kbit (32K x 8) nvSRAM
Document Number: 001-06968
Rev.
*C
*D
*G
*A
*B
*E
*F
**
ECN No.
1349963
2427986
2606744
2708327
427789
437321
472053
503290
Submission
05/18/2009
See ECN
See ECN
See ECN
See ECN
See ECN
See ECN
02/19/09
Date
GVCH/PYRS
GVCH/PYRS
UHA/SFV
Change
Orig. of
GVCH
TUP
TUP
TUP
PCI
New data sheet
Show data sheet on external Web
Updated Part Numbering Nomenclature and Ordering Information
Changed from “Advance” to “Preliminary”
Changed the term “Unlimited” to “Infinite”
Changed I
Removed Industrial Grade mention
Removed 35 ns speed bin
Removed I
Corrected V
Removed all references pertaining to OE controlled Software STORE and
RECALL operation
Changed the address locations of the software STORE/RECALL com-
mand
Updated Part Nomenclature Table and Ordering Information Table
Changed from “Preliminary” to “Final.” Updated AC Test Conditions
Updated Ordering Information Table
Move to external web
Updated Feature Section
Added 35 ns access speed specs
Added CDIP package
Removed HSB ganging feature
Added footnote 5
Updates all the notes
Added Best practices
Added Industrial specs
Changed Icc3 from 15 mA to 10 mA
Added I
Added parameter V
Changed V
Added footnote 6 and 7
Added t
Added Thermal resistance values
Changed parameter t
Renamed t
Renamed t
Updated Figure 13
Changed part number from CY14E256L-D45XI to CY14E256L-D45I
VSBL
SB1
CC3
CC1
GLAX
RESTORE
IH
spec
IL
and V
test conditions from -2 and 4 to -4 and 8mA
min specification from (V
value from 10mA to 15mA
values from the DC table for 35 ns Industrial Grade
to t
RESET
BL
HACE
to t
AS
DHSB
Description of Change
to t
parameter to Autostore or Power-up Recall table
SA
CC
- 0.5) to (V
SS
CY14E256L
- 0.5)
Page 17 of 18
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