CY14E256L-D45I CYPRESS [Cypress Semiconductor], CY14E256L-D45I Datasheet - Page 8

• Manufacturer Part Number: CY14E256L-D45I
• Description: 256 Kbit (32K x 8) nvSRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

DC Electrical Characteristics
Over the operating range (continued)(V
Data Retention and Endurance
Capacitance
In the following table, the capacitance parameters are listed.
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
AC Test Conditions
Input Pulse Levels .................................................... 0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels .................... 1.5V
Document Number: 001-06968 Rev. *G
V
V
V
V
V
DATA
NV
C
C
Note
Parameter
8. These parameters are guaranteed by design and are not tested.
IL
OH
OL
BL
CAP
IN
OUT
C
Parameter
Parameter
Parameter
Output
R
Θ
Θ
JA
JC
5.0V
Input LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Logic ‘0’ Voltage on HSB
Output
Storage Capacitor
Data Retention
Nonvolatile STORE Operations
Input Capacitance
Output Capacitance
30 pF
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Description
Description
Description
R1 963Ω
CC
I
I
I
Between V
= 4.5V to 5.5V)
OUT
OUT
OUT
T
V
A
CC
= –4 mA
= 8 mA
= 3 mA
= 25°C, f = 1 MHz,
= 0 to 3.0V
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA / JESD51.
512Ω
Figure 6. AC Test Loads
R2
Description
CAP
pin and Vss, 6V rated. 68 µF +20% nom.
[6]
[8]
Test Conditions
Test Conditions
Test Conditions
[8]
Output
5.0V
5 pF
R1 963Ω
32-SOIC
35.45
13.26
V
1,000
Max
Min
0.5
2.4
Min
For Tri-state Specs
SS
100
54
5
7
–
512Ω
32-CDIP
CY14E256L
R2
TBD
TBD
Max
260
0.8
0.4
0.4
Page 8 of 18
Years
Unit
Unit
pF
pF
K
°C/W
°C/W
Unit
Unit
uF
V
V
V
V
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