CY14E256LA CYPRESS [Cypress Semiconductor], CY14E256LA Datasheet - Page 12

• Manufacturer Part Number: CY14E256LA
• Manufacturer: CYPRESS [Cypress Semiconductor]

AutoStore/Power-up RECALL
Switching Waveforms
Document Number: 001-54952 Rev. *F
Notes
t
t
t
V
t
V
t
t
21. t
24. These parameters are guaranteed by design and are not tested.
25. Read and Write cycles are ignored during STORE, RECALL, and while V
HRECALL
STORE
DELAY
VCCRISE
LZHSB
HHHD
22. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
23. On a Hardware STORE and AutoStore initiation, SRAM write operation continues to be enabled for time t
26. During power-up and power-down, HSB glitches when HSB pin is pulled up through an external resistor.
SWITCH
HDIS
HRECALL
[24]
[24]
[23]
[24]
[22]
Parameter
[24]
[21]
starts from the time V
Read & Write
Inhibited
(RWI)
POWER-
AutoStore
RECALL
HSB OUT
V
UP
SWITCH
V
V
HDIS
CC
CC
POWER-UP
Power-up RECALL duration
STORE cycle duration
Time allowed to complete SRAM write cycle
Low voltage trigger level
V
HSB output disable voltage
HSB to output active time
HSB high active time
rises above V
RECALL
CC
Note
t
VCCRISE
rise time
26
SWITCH.
Figure 8. AutoStore or Power-up RECALL
Read & Write
t
t
t
LZHSB
HRECALL
HHHD
Description
Note
AutoStore
t
BROWN
DELAY
CC
22
OUT
is less than V
t
STORE
POWER-UP
RECALL
SWITCH.
t
HRECALL
t
t
HHHD
LZHSB
DELAY
Read & Write
[25]
.
t
DELAY
Min
150
–
–
–
–
–
–
CY14E256LA
–
Note
AutoStore
POWER
DOWN
22
CY14E256LA
Note
t
STORE
Max
500
4.4
1.9
20
25
8
–
5
26
Page 12 of 19
Unit
ms
ms
ns
µs
µs
ns
V
V
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