LPC2917/01 NXP [NXP Semiconductors], LPC2917/01 Datasheet - Page 71

• Manufacturer Part Number: LPC2917/01
• Description: ARM9 microcontroller with CAN and LIN
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
LPC2917_19_01_2
Preliminary data sheet
9.4 Dynamic characteristics: flash memory and EEPROM
Table 38.
T
V
[1]
Table 39.
T
V
Symbol
N
t
t
t
t
t
t
t
t
Symbol
f
N
t
ret
prog
er
init
wr(pg)
fl(BIST)
a(clk)
a(A)
clk
ret
amb
amb
DDA(ADC3V3)
DDA(ADC3V3)
endu
endu
Number of program/erase cycles.
= -40 C to +85 C; V
= -40 C to +85 C; V
Parameter
endurance
retention time
programming time
erase time
initialization time
page write time
flash word BIST time
clock access time
address access time
Flash characteristics
EEPROM characteristics
Parameter
clock frequency
endurance
retention time
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
Rev. 02 — 17 June 2009
DD(CORE)
DD(CORE)
Conditions
powered
= V
= V
Conditions
powered
unpowered
word
global
sector
DD(OSC_PLL)
DD(OSC_PLL)
LPC2917/01; LPC2919/01
; V
; V
ARM9 microcontroller with CAN and LIN
Min
200
100000
10
DD(IO)
DD(IO)
[1]
= 2.7 V to 3.6 V;
= 2.7 V to 3.6 V;
Min
10000
10
20
0.95
95
95
-
0.95
-
-
-
Typ
375
500000
-
Typ
-
-
-
1
100
100
-
1
38
-
-
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
1.05
105
105
150
1.05
70
63.4
60.3
Max
400
-
-
Unit
kHz
cycles
years
Unit
cycles
years
years
ms
ms
ms
ms
ns
ns
ns
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