STM32F103C4H6ATR STMICROELECTRONICS [STMicroelectronics], STM32F103C4H6ATR Datasheet - Page 50

• Manufacturer Part Number: STM32F103C4H6ATR
• Description: Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

50/80
Table 30.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
●
●
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 31.
V
V
Symbol
Symbol Parameter
FESD
EFTB
S
EMI
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
Peak level V
EMS characteristics
EMI characteristics
DD
Parameter
3.3 V, T
Conditions
Doc ID 15060 Rev 3
A
DD
25 °C
and V
SS
130 MHz to 1GHz
frequency band
SAE EMI Level
30 to 130 MHz
0.1 to 30 MHz
Monitored
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
HCLK
HCLK
DD
DD
3.3 V, T
3.3 V, T
 72 MHz
72 MHz
Conditions
A
A
8/48 MHz 8/72 MHz
Max vs. [f
+25 °C,
+25 °C,
12
22
23
4
HSE
/f
12
19
29
HCLK
4
]
Level/
Class
dBµV
Unit
2B
4A
-