M52D32162A-10TG ESMT [Elite Semiconductor Memory Technology Inc.], M52D32162A-10TG Datasheet - Page 12
M52D32162A-10TG
Manufacturer Part Number
M52D32162A-10TG
Description
1M x 16Bit x 2Banks Mobile Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.M52D32162A-10TG.pdf
(32 pages)
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ESMT
*Note: 1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
Elite Semiconductor Memory Technology Inc.
2. Bank active & read/write are controlled by BA.
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command.
4. A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
A10/AP
BA
0
1
0
1
0
0
1
BA
BA
X
0
1
0
1
0
1
Active & Read/Write
Both Banks
precharge
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Bank A
Bank B
Bank A
Bank B
Operation
Revision : 1.6
Publication Date : Jul. 2009
M52D32162A
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