M52D32162A-10TG ESMT [Elite Semiconductor Memory Technology Inc.], M52D32162A-10TG Datasheet - Page 31
M52D32162A-10TG
Manufacturer Part Number
M52D32162A-10TG
Description
1M x 16Bit x 2Banks Mobile Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.M52D32162A-10TG.pdf
(32 pages)
- Current page: 31 of 32
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ESMT
Elite Semiconductor Memory Technology Inc.
Revision History
Revision
1.0
1.1
1.2
1.3
1.4
1.5
1.6
2006.08.16
2006.08.31
2007.04.24
2007.04.27
2007.05.14
2009.02.03
2009.07.15
Date
Modify V
Original
Delete BGA ball name of packing dimensions
1. Rename BGA pin name (BA1 to NC ; BA0 to BA)
2. Modify DC Characteristics
Modify t
1.Move Revision History to the last
2.Modify the test condition of ICC3N
3.Add the specification of t
4.Modify the description about self refresh operation
5.Upgrade the specification of speed grade -7 instead of -7.5
6.Add the description about A9 bit of MRS
1. Add the specification of t
2. Correct the voltage of absolute maximum ratings
3. Correct Power Up Sequence for EMRS and add the chart of
4. Add the chart of Deep Power Down Mode
EMRS
SS
DD
(1.5ns => 2.5ns) and t
; V
DDQ
; t
SAC
; ICC1; ICC2PS; ICC6 spec
Description
REF
RFC
SH
(1ns => 1.5ns)
Revision : 1.4
Publication Date : May. 2007
M52D32162A
31/32
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