M52D32162A-10TG ESMT [Elite Semiconductor Memory Technology Inc.], M52D32162A-10TG Datasheet - Page 18

• Manufacturer Part Number: M52D32162A-10TG
• Description: 1M x 16Bit x 2Banks Mobile Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
Read & Write Cycle at Different Bank @ Burst Length = 4
DQ
*Note: 1.t
Elite Semiconductor Memory Technology Inc.
CLOCK
A10/AP
ADDR
CL=3
CL=2
R A S
CKE
CAS
WE
C S
DQM
BA
CDL
0
should be met to complete write.
Row Active
(A-Bank)
RAa
RAa
1
2
3
(A-Bank)
Read
CAa
tRRD
4
5
QAa0
6
Row Active
(B-Bank)
QAa1
QAa0
RBb
RBb
7
Precharge
(A-Bank)
QAa1
QAa2 QAa3
8
QAa2 QAa3
9
HIGH
1 0
11
(B-Bank)
DBb0
Write
DBb0
CBb
1 2
Row Active
(A-Bank)
DBb1
DBb1 DBb2 DBb3
RAc
RAc
1 3
DBb2
1 4
Revision : 1.6
Publication Date : Jul. 2009
DBb3
1 5
M52D32162A
t
CDL
(A-Bank)
Read
CAc
*Note1
1 6
1 7
QAc0
1 8
QAc0
QAc1
: D o n ' t C a r e
18/32
1 9
QAc2
QAc1