M52D32162A-10TG ESMT [Elite Semiconductor Memory Technology Inc.], M52D32162A-10TG Datasheet - Page 7
M52D32162A-10TG
Manufacturer Part Number
M52D32162A-10TG
Description
1M x 16Bit x 2Banks Mobile Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.M52D32162A-10TG.pdf
(32 pages)
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ESMT
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Note:
Elite Semiconductor Memory Technology Inc.
Function
Address
A8
A9
0
0
1
1
0
1
Write Burst Length
A7
1. RFU (Reserved for future use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.
3. The full column burst (256 bit) is available only at sequential mode of burst type.
0
1
0
1
Test Mode
Mode Register Set
Single Bit
Length
BA
0
Burst
Reserved
Reserved
Reserved
Type
A11~A10/AP
RFU
A6
0
0
0
0
1
1
1
1
A5
CAS Latency
0
0
1
1
0
0
1
1
W.B.L
A9
A4
0
1
0
1
0
1
0
1
A8
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
TM
2
3
A7
A3
A6
0
1
Burst Type
CAS Latency
Sequential
Interleave
A5
Type
A4
Full Page Length: 256
A2
0
0
0
0
1
1
1
1
Revision : 1.6
BT
Publication Date : Jul. 2009
A3
M52D32162A
A1
0
0
1
1
0
0
1
1
A2
Burst Length
Burst Length
A0
0
1
0
1
0
1
0
1
A1
Reserved Reserved
Reserved Reserved
Reserved Reserved
Full Page Reserved
BT = 0
A0
1
2
4
8
7/32
BT = 1
1
2
4
8
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