TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 27

• Manufacturer Part Number: TE28F008xxx
• Description: (TE28F Series) 3 Volt Advanced Boot Block Flash Memory
• Manufacturer: Intel Corporation

3UHOLPLQDU\
I
+I
I
I
V
V
V
V
V
V
V
V
V
V
V
CCE
PPES
PPWS
IL
IH
OL
OH
PPLK
PP1
PP2
PP3
PP4
LKO
LKO2
Sym
Sym
PPE
V
for 0.18 Micron Product
V
for 0.25 Micron and 0.4
Micron Product
V
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
V
Erase Operations
V
Lock Voltage
V
Lock Voltage
CC
CC
PP
PP
PP
CC
CCQ
Erase Suspend
Lock-Out Voltage
during Program and
+ V
+ V
Prog/Erase
Prog/Erase
DC Characteristics, Continued
DC Characteristics, Continued
NOTES:
Parameter
Parameter
1. All currents are in RMS unless otherwise noted. Typical values at nominal V
PP
PP
Erase Current
Erase Current
V
V
Note
1,2,4
1,2,4
Note
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
V
V
1,4
5,6
CCQ
CCQ
CC
CC
5
5
5
5
–0.1V
V
–0.4
11.4
Typ
Min
–0.1
2.0
2.7
1.5
1.2
2.7 V–3.6 V
2.7 V–3.6 V
16
16
20
16
50
2.7 V–3.6 V
2.7 V–3.6 V
CCQ
0.22 V
V
+0.3V
V
Max
Max
12.6
200
CC
0.1
1.5
3.6
45
45
45
45
CCQ
*
–0.4V
–0.1V
V
V
2.7 V–2.85 V
1.65 V–2.5 V
2.7 V–2.85 V
1.65 V–2.5 V
–0.4
11.4
Typ
Min
-0.1
2.7
1.5
1.2
21
16
21
16
50
CCQ
CCQ
+0.3V
V
Max
Max
2.85
12.6
200
0.4
0.1
1.5
45
45
45
45
CCQ
–0.4V
–0.1V
V
V
–0.4
11.4
Typ
Min
-0.1
2.7 V–3.3 V
1.8 V–2.5 V
2.7 V–3.3 V
1.8 V–2.5 V
2.7
1.5
1.2
21
16
21
16
50
CCQ
CCQ
+0.3V
V
Max
Max
12.6
200
0.4
0.1
1.5
3.3
45
45
45
45
CCQ
CC
, T
Unit
Unit
mA
mA
mA
mA
µA
A
V
V
V
V
V
V
V
V
V
V
V
= +25 °C.
V
Program in
Progress
V
Program in
Progress
V
Program in
Progress
V
Program in
Progress
V
Program or Erase
Suspend in
Progress
V
V
I
V
V
I
Complete Write
Protection
OL
OH
Test Conditions
PP
PP
PP
PP
PP
Test Conditions
CC
CCQ
CC
CCQ
= 100 A
= –100 A
= V
= V
= V
= V
= V
= V
= V
= V
= V
PP4
PP4
PP1, 2, 3
PP1, 2, 3
PP1, 2, 3, 4
CC
CC
CCQ
CCQ
Min
Min
Min
Min
21