TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 29
TE28F008xxx
Manufacturer Part Number
TE28F008xxx
Description
(TE28F Series) 3 Volt Advanced Boot Block Flash Memory
Manufacturer
Intel Corporation
Datasheet
1.TE28F008XXX.pdf
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4.5
3UHOLPLQDU\
R10
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
t
t
t
t
t
t
t
t
t
Sym
GHQZ
AVQV
GLQV
PHQV
GLQX
EHQZ
ELQV
ELQX
AVAV
t
OH
Read Cycle Time
Address to Output Delay
CE# to Output Delay
OE# to Output Delay
RP# to Output Delay
CE# to Output in Low Z
OE# to Output in Low Z
CE# to Output in High Z
OE# to Output in High Z
Output Hold from Address,
CE#, or OE# Change,
Whichever Occurs First
AC Characteristics —Read Operations
NOTES:
See
See
input slew rate.
1. OE# may be delayed up to t
2. Sampled, but not 100% tested.
Parameter
Figure 7, “AC Waveform: Read Operations” on page
Figure 5, “Input/Output Reference Waveform” on page 22
(1)
(1)
Product
Density
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
V
(2)
(2)
(2)
(2)
(2)
CC
ELQV–
Min
3.0 V–3.6 V
80
0
0
0
t
GLQV
Max
600
after the falling edge of CE# without impact on t
80
80
30
25
25
90 ns
Min
2.7 V–3.6 V
90
0
0
0
26.
Max
600
90
90
30
25
25
for timing measurements and maximum allowable
4/8 Mbit
Min
100
3.0 V–3.6 V
0
0
0
Max
100
100
600
30
25
25
110 ns
Min
110
2.7 V–3.6 V
0
0
0
ELQV
.
Max
110
110
600
30
25
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
23
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