TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 37
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TE28F008xxx
Manufacturer Part Number
TE28F008xxx
Description
(TE28F Series) 3 Volt Advanced Boot Block Flash Memory
Manufacturer
Intel Corporation
Datasheet
1.TE28F008XXX.pdf
(58 pages)
- Current page: 37 of 58
- Download datasheet (921Kb)
4.7
3UHOLPLQDU\
Program and Erase Timings
NOTES:
1. Typical values measured at nominal voltages and T
2. Excludes external system-level overhead.
3. Sampled, not 100% tested.
4. x8 not available on 0.18 m offerings
t
t
t
t
t
t
t
BWPB
BWMB
WHQV1
WHQV2
WHQV3
WHRH1
WHRH2
Symbol
/ t
/ t
/ t
/ t
/ t
EHQV1
EHQV2
EHQV3
EHRH1
EHRH2
8-KB Parameter Block
Program Time (Byte)
4-KW Parameter Block
Program Time (Word)
64-KB Main Block
Program Time (Byte)
32-KW Main Block
Program Time(Word)
Byte Program Time
Word Program Time for
0.18 Micron Product
Word Program Time for 0.25
Micron and 0.4 Micron Products
8-KB Parameter Block
Erase Time (Byte)
4-KW Parameter Block
Erase Time (Word)
64-KB Main Block
Erase Time (Byte)
32-KW Main Block
Erase Time (Word)
Program Suspend Latency
Erase Suspend Latency
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Parameter
A
Notes
2, 3, 4
2, 3, 4
2, 3, 4
2, 3, 4
= +25 °C.
2, 3
2, 3
2, 3
2, 3
2, 3
2, 3
2,3
V
PP
Typ
0.16
0.10
1.2
0.8
0.5
17
12
22
2.7 V–3.6 V
1
1
1
5
5
(1)
Max
0.48
0.30
165
200
200
3.7
2.4
10
20
4
4
5
5
Typ
11.4 V–12.6 V
0.08
0.03
0.24
0.6
0.8
0.4
0.6
8
5
8
8
1
5
(1)
Max
0.24
0.12
185
185
185
1.7
10
20
1
4
4
5
5
Units
µs
µs
µs
µs
µs
s
s
s
s
s
s
s
s
31
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