K9F1G08Q0M-PCB0 Samsung semiconductor, K9F1G08Q0M-PCB0 Datasheet - Page 11

• Manufacturer Part Number: K9F1G08Q0M-PCB0
• Description: 1Gb Gb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1GXXX0M-XCB0
DC AND OPERATING CHARACTERISTICS
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
Operat-
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Current
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
ing
Parameter
Parameter
Page Read with
Serial Access
Program
Erase
Parameter
Symbol
V
V
K9F1GXXX0M-XCB0
K9F1GXXX0M-XIB0
K9F1GXXX0M-XCB0
K9F1GXXX0M-XIB0
CC
SS
SS
Symbol
I
OL
I
I
I
I
I
V
V
V
CC
CC
CC
SB
SB
I
V
(R/B)
I
LO
LI
OH
OL
IH
IL
1
2
1
2
3
1.70
Min
0
CC,
tRC=50ns, CE=V
I
CE=V
CE=V
WP=PRE=0V/V
V
V
K9F1GXXQ0M :I
K9F1GXXU0M :I
K9F1GXXQ0M :I
K9F1GXXU0M :I
K9F1GXXQ0M :V
K9F1GXXU0M :V
OUT
IN
OUT
+0.3V which, during transitions, may overshoot to V
K9F1GXXQ0M(1.8V)
=0 to Vcc(max)
=0mA
=0 to Vcc(max)
Test Conditions
IH
CC
:
, WP=PRE=0V/V
T
-0.2,
A
=0 to 70 C, K9F1GXXX0M-XIB0
Typ.
1.8
0
-
-
-
-
CC
OH
OH
OL
OL
IL
OL
OL
Symbol
V
(Recommended operating conditions otherwise noted.)
=2.1mA
=100uA
=-400 A
T
=-100 A
T
IN/OUT
=0.1V
=0.4V
V
Ios
BIAS
STG
CC
10
CC
Max
1.95
0
V
Vcc-0.1
K9F1GXXQ0M(1.8V) K9F1GXXU0M(3.3V)
K9F1GXXQ0M(1.8V)
CC
Min
-0.3
3
-
-
-
-
-
-
-
-
-0.4
-0.6 to + 2.45
-0.2 to + 2.45
Min
2.7
0
Typ
:
20
T
5
5
5
4
-
-
-
-
-
-
-
A
K9F1GXXU0M(3.3V)
=-40 to 85 C)
CC
-10 to +125
-40 to +125
-65 to +150
+2.0V for periods <20ns.
V
Max
100
0.3
0.4
0.1
Rating
15
15
15
CC
1
20
20
-
-
Typ.
+
5
3.3
FLASH MEMORY
0
Min
-0.3
2.0
2.4
K9F1GXXU0M(3.3V)
8
-
-
-
-
-
-
-
-
-0.6 to + 4.6
-0.6 to + 4.6
Typ
10
10
10
20
10
-
-
-
-
-
-
-
Max
SAMSUNG
3.6
0
V
CC
Max
100
0.8
0.4
20
20
20
1
20
20
-
-
+0.3
Unit
Unit
mA
V
V
V
C
C
Unit
mA
mA
V
A