K9F1G08Q0M-PCB0 Samsung semiconductor, K9F1G08Q0M-PCB0 Datasheet - Page 18

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K9F1G08Q0M-PCB0

Manufacturer Part Number
K9F1G08Q0M-PCB0
Description
1Gb Gb 1.8V NAND Flash Errata
Manufacturer
Samsung semiconductor
Datasheet
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
NOTE
CLE
CE
WE
ALE
* Command Latch Cycle
K9F1G16X0M : I/O
* Address Latch Cycle
K9F1G16X0M : I/O
CLE
CE
WE
ALE
K9F1G08X0B(X8 device)
K9F1G16X0B(X16 device)
I/Ox
I/Ox
Device
8
8
~
~
15 must be set to "0"
15 must be set to "0"
t
CS
t
CLS
t
ALS
I/O 0 ~ I/O 15
I/O 0 ~ I/O 7
I/Ox
I/O
t
t
t
ALS
t
WP
CLS
CS
Col. Add1
t
DS
t
WC
t
t
ALH
DH
t
Data In/Out
WH
~1056word
~2112byte
t
WP
DATA
t
ALS
t
DS
Command
t
17
WP
Col. Add2
t
DS
t
t
t
DH
CLH
CH
t
t
WC
Col. Add1
ALH
t
t
ALH
A0~A7
A0~A7
DH
t
WH
t
ALS
Col. Add2
t
A8~A11
A8~A10
WP
Row Add1
t
DS
t
ADDRESS
WC
t
t
ALH
DH
FLASH MEMORY
t
WH
Row Add1
A12~A19
A11~A18
t
ALS
SAMSUNG
t
Row Add2
WP
t
DS
t
Row Add2
t
DH
A20~A27
A19~A26
ALH

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