K9F1G08Q0M-PCB0 Samsung semiconductor, K9F1G08Q0M-PCB0 Datasheet - Page 19

• Manufacturer Part Number: K9F1G08Q0M-PCB0
• Description: 1Gb Gb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
I/Ox
* Input Data Latch Cycle
ALE
CLE
CE
WE
CE
RE
R/B
I/Ox
* Serial Access Cycle after Read
t
ALS
NOTES : Transition is measured 200mV from steady state voltage with load.
t
t
RR
REA
t
t
CEA
WP
t
This parameter is sampled and not 100% tested.
DS
DIN 0
t
WC
t
DH
t
t
NOTES : DIN final means 2112(X8) or 1056(X16)
RP
WH
Dout
(CLE=L, WE=H, ALE=L)
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
18
t
DH
Dout
t
RHZ*
t
DIN final*
WP
t
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
RHZ*
OH
t
t
OH
CHZ*
SAMSUNG