K9F1G08Q0M-PCB0 Samsung semiconductor, K9F1G08Q0M-PCB0 Datasheet - Page 35

• Manufacturer Part Number: K9F1G08Q0M-PCB0
• Description: 1Gb Gb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation. The R/B pin
transitions to low for tRST after the Reset command is written. Refer to Figure 15 below.
Figure 15. RESET Operation
R/B
I/O
Table3. Device Status
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacturer code(ECh), and the device code and XXh, 4th cycle ID, respectively. The
command register remains in Read ID mode until further commands are issued to it. Figure 14 shows the operation sequence.
CLE
CE
WE
ALE
RE
I/O
Figure 14. Read ID Operation
X
Operation Mode
X
PRE status
90h
FFh
First page data access is ready
Address. 1cycle
00h
High
t
CLR
K9F1G08Q0M
K9F1G16Q0M
K9F1G08U0M
K9F1G16U0M
Device
t
WHR
After Power-up
t
AR
t
CEA
t
REA
t
RST
Maker code
34
Device Code*(2nd Cycle)
00h command is latched
ECh
Low
C1h
A1h
F1h
B1h
Device code
Device
Code*
XXh
FLASH MEMORY
Waiting for next command
4th Cycle*
15h
15h
55h
55h
4th Cyc.*
After Reset
SAMSUNG