K9F1G08Q0M-PCB0 Samsung semiconductor, K9F1G08Q0M-PCB0 Datasheet - Page 2

• Manufacturer Part Number: K9F1G08Q0M-PCB0
• Description: 1Gb Gb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Document Title
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
128M x 8 Bit / 64M x 16 Bit
Revision No
0.0
0.1
0.2
0.3
0.4
0.5
0.6
History
1. Initial issue
1. Iol(R/B) of 1.8V is changed.
- min. value : 7mA --> 3mA
- Typ. value : 8mA --> 4mA
2. AC parameter is changed.
3. A recovery time of minimum 1 s is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10 s is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
1. ALE status fault in ’ Random data out in a page’ timing diagram(page 19)
is fixed.
1. tAR1, tAR2 are merged to tAR.(Page11)
2. min. tCLR is changed from 50ns to 10ns.(Page11)
3. min. tREA is changed from 35ns to 30ns.(Page11)
4. min. tWC is changed from 50ns to 45ns.(Page11)
5. tRHZ is devided into tRHZ and tOH.(Page11)
6. tCHZ is devided into tCHZ and tOH.(Page11)
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
The min. Vcc value 1.8V devices is changed.
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F1G08U0M-FCB0,FIB0
K9F1G08Q0M-PCB0,PIB0
K9F1G08U0M-PCB0,PIB0
K9F1G16U0M-PCB0,PIB0
K9F1G16Q0M-PCB0,PIB0
tRP(min.) : 30ns --> 25ns
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns
(After revision) min. tAR = 10ns
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
NAND Flash Memory
1
FLASH MEMORY
Draft Date
July. 5. 2001
Nov. 5. 2001
Dec. 4. 2001
Apr. 25. 2002
Nov. 22.2002
Mar. 6.2003
Mar. 13.2003
SAMSUNG
Remark
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