K7D801871B-HC30 Samsung semiconductor, K7D801871B-HC30 Datasheet - Page 8

• Manufacturer Part Number: K7D801871B-HC30
• Description: 256Kx36 & 512Kx18 SRAM
• Manufacturer: Samsung semiconductor

K7D803671B
K7D801871B
DC CHARACTERISTICS
NOTE :1. Minimum cycle. I
PIN CAPACITANCE
NOTE : Periodically sampled and not 100% tested.(T
Input Capacitance
Data Output Capacitance
Average Power Supply Operating Current(x36)
(Cycle time = t
Average Power Supply Operating Current(x18)
(Cycle time = t
Stop Clock Standby Current
(V
Input Leakage Current
(V
Output Leakage Current
(V
Output High Voltage(Programmable Impedance Mode)
Output Low Voltage(Programmable Impedance Mode)
Output High Voltage(I
Output Low Voltage(I
IN
IN
OUT
=V
=V
2. 50% read cycles.
3. |I
4. |I
5. Minimum Impedance Mode when ZQ pin is connected to V
=V
IH
SS
OH
OL
SS
or V
or V
|=(V
|=(V
or V
IL
DDQ
DDQ
DDQ
KHKH
KHKH
, K=Low, K=Low)
Parameter
DDQ
/2)/(RQ/5) 15% @V
/2)/(RQ/5) 15% @V
)
)
min)
min)
OL
OH
OUT
Parameter
=0.1mA)
=-0.1mA)
=0mA.
OL
OH
=V
=V
DDQ
DDQ
/2 for 175
/2 for 175
A
=25 C, f=1MHz)
Symbol
C
C
OUT
IN
RQ
RQ
ss
Symbol
350 .
.
350 .
I
I
I
I
I
I
I
I
I
I
V
V
V
V
I
DD37
DD35
DD33
DD30
DD25
DD37
DD35
DD33
DD30
DD25
I
SB1
I
- 8 -
LO
OH1
OL1
OH2
OL2
LI
Test Condition
V
V
OUT
IN
=0V
V
=0V
V
DDQ
DDQ
Min
V
V
-1
-1
-
-
-
SS
SS
-0.2
/2
256Kx36 & 512Kx18 SRAM
Min
V
-
-
V
V
Max
DDQ
880
850
750
670
600
830
800
700
620
550
150
0.2
DDQ
DDQ
1
1
/2
Max
4
5
Unit
mA
mA
mA
V
V
V
V
A
A
January. 2002
Unit
Note
pF
pF
Rev 4.0
1,2
1,2
1
3
4
5
5